Thermally stimulated exoelectron emission from solid Xe

Thermally-stimulated emission of exoelectrons and photons from solid Xe pre-irradiated by low-energy electrons were studied. A high sensitivity of thermally-stimulated luminescence (TSL) and thermally-stimulated exoelectron emission (TSEE) to sample prehistory was demonstrated. It was shown that electron traps in unannealed samples are characterized by a much broader distribution of trap levels in comparison with annealed samples and their concentration exceeds in number that in annealed samples. Both phenomena, TSL and TSEE, were found to be triggered by release of electrons from the same kind of traps. The data obtained suggest a competition between two relaxation channels: charge recombination and electron transport terminated by TSL and TSEE. It was found that TSEE predominates at low temperatures while at higher temperatures TSL prevails. An additional relaxation channel, a photon-stimulated exoelectron emission from pre-irradiated solid Xe, was revealed

Activation spectroscopy of electronically induced defects in solid Ne

Thermally stimulated luminescence (TSL) and thermally stimulated exoelectron emission (TSEE) methods were used in combination with cathodoluminescence to probe electronically induced defects in solid Ne. The defects were generated by a low energy electron beam. For spectroscopic study we used Ar* centers in Ne matrix as a model system. At a temperature of 10.5 K a sharp decrease in the intensity of "defect" components in the luminescence spectrum was observed. From the analysis of the corresponding peak in the TSL and TSEE yields the trap depth energy was estimated and compared with available theoretical calculations. The obtained data support the model suggested by Song, that stable electronically induced defects have the configuration of second-neighbour Frenkel pairs